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MSE Seminar-Prof. Robert Sinclair, Stanford University
Friday, February 8, 2008
1:00 p.m.
Rm. 2108, Chemical and Nuclear Engineering Bldg.
For More Information:
Annette Mateus
301 405 5207

"In Situ HREM of Material Reactions"

The reactions which occur at material interfaces and in thin films have a profound effect on the resulting structure and properties. One effective method to investigate such behavior is to follow its progress, in real time, using high-resolution imaging in a transmission electron microscope. This provides direct viewing, at the atomic level, and allows kinetic measurements by changing the sample temperature in a controlled fashion. The focused-ion beam machine (FIB) further extends this capability. The development of these methods, particularly for materials of interest for semiconductor devices, will be described, and their importance emphasized using an historical analogy.

For more information, contact Annette Mateus at (301) 405-5207 or

This Event is For: Public

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