Materials Development
High quality epitaxial layers for use in heterojunction devices: Molecular Beam Epitaxy. Latest MBE results are in the area of MBE growth as reported
in COMMAD 2002 (see attached.)

Device Physics and Modeling
Parasitic effects in HEMTs and 2D structures
Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55µm
Effects of Bragg Mirror Interface Grading and Layer Thickness Variations on VCSEL Performance at 1.55µm

Processing Technology Research
Laser processing (also, see attached)
New metalization schemes
In-situ processing for high performance GaAs devices
Non-Au based metalization

New Devices
Quantum well and superlattice devices
Optical interconnects and optical computing
Opto-electronic monolithically integrated optoelectronics
Analog mm-wave integrated circuits
Molecular Nanoelectronics devices using 1D and 2D Structures (powerpoint)