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Department of Materials Science and Engineering professor Aris Christou has been invited to deliver a keynote address at the Fifth International Conference on Micro – Nanoelectronics, Nanotechnologies and MEMS (Micro&Nano2012), to be held in October in Heraklion, Greece. Christou will also be honored by the Micro & Nano Scientific Society in recognition of both his significant contributions to the field of semiconductor research and his efforts to establish the Microelectronics Research Group at the University of Crete.
Christou's address, titled "Compound Semiconductors: From Discrete Devices to Integrated Circuits, and Understanding Process Science-Reliability Physics Relationships," will discuss advances in testing and failure mode analyses of GaAs devices and comment on their relevance to the historical development of the field of high frequency devices and circuits. Christou's recent efforts have, for the first time, produced comprehensive reliability physics models for GaAs-based field-effect transistors (FETs) and high electron mobility transistors (HEMTs), including drift-diffusion, electro-thermal, hot-phonon, and Boltzmann transport and charge control. The models also enable the effective parametization of the degradation mechanisms and the prediction of statistically meaningful device lifetimes. His investigations have allowed GaAs-based FETs and HEMTs to be adapted for use in both space and communications systems.
Micro&Nano 2012, an international conference focusing on micro- and nano-electronic devices, optoelectronic and photonic devices, microelectromechanical systems (MEMS) and circuits, and material growth, synthesis and processing, will be organized by Greece's Foundation for Research & Technology (FORTH) and the University of Crete. The conference strives to promote collaboration among research groups from academia, research, and industry.
For more information, visit the Micro&Nano 2012 web site »
September 14, 2012
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