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C-mode Scanning Acoustic Microscope

C-SAM microscopeWhat is C-SAM?
System 3100 is C-Mode Scanning Acoustic Microscope (C-SAM) that examines samples and produces high resolution, ultrasonic images. The most technologically advanced, self-contained instrument of its kind. In the laboratory or in quality control, C-SAM is effective for the nondestructive testing of a wide range of samples, including ceramics, metals, polymers, and other composite materials. C-SAM reveals the internal features beneath a sample's surface one plane at a time, enabling the discovery of hidden defects. Its automatic focusing capability makes C-SAM extremely sensitive to interfacial anomalies such as poor bonding, delamination, voids, cracks, and foreign matter inclusions.

Outstanding Features

  • A unique Very High Speed (VHS) scanner produces images in less than 9 seconds, orders of magnitude faster than other ultrasonic inspection systems
  • Single depth automatic focus for the Z-axis
  • A unique Acoustic Impedance Polarity Detector (AIPD) differentiates between high and low impedance materials at an interface
  • A frequency range of 10-100 MHz provides for a wide range of penetration and resolution capabilities
  • The built-in X-Y table accommodates large sample positioning over 10 inch square area.


Block Diagram of C-SAM


block diagram

TOF image
Time of Flight (TOF) 3-D acoustic image showing a crack profile in a plastic leaded chip carrier (PLCC).



Q-BAM imageQ-BAM Nondestructive cross-section of a plastic integrated circuit. The top half of the display shows an interface scan at the paddle surface. Red is disbonded. The bottom half is the cross-section showing the die paddle, a void 230 microns above it and cracks in the encapsulant extending up towards the surface. Each division of scale equals 0.17 mm in depth.


Bond wires

Bond wires (grey) within a plastic dual in-line package (PDIP). The grey spots are voids in the molding compound.



Companies interested in failure analysis of IC packages can discuss their interests with
Professor Aris Christou.

Additional Resources

 

   
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